Mfg Part Number: V510-00018-1 | Alternate P/N: V510000181 | NSN : 5962-01-241-3168 |
NIIN : 012413168 | CAGE Code : 34335 | Manufacturer: Advanced Micro Devices Inc |
Item Name : Microcircuit Memory | FSC : 5962 Microcircuits Electronic |
If you are in the market for Microcircuit Memory items, such as part number V510-00018-1, look no further than Integrated Parts Procurement! We currently have this Advanced Micro Devices Inc item in stock and it is listed under stock number 5962-01-241-3168, allowing you to locate it quickly and easily. We invite you to fill out an RFQ form for V510-00018-1 to receive a customized quote within 15 minutes! For any other inquiries, our team of experts is available to assist around the clock via phone or email.
Take your time to explore our ever-expanding catalogs, and you will find that the NSN 5962-01-241-3168 can be found listed under CAGE Code 34335. However, we carry an array of other NSN products, all of which have been sourced from trusted distributors like Advanced Micro Devices Inc. We operate with AS9120B, ISO 9001:2015, and FAA AC 00-56B accreditation, and adhere to a strict NO CHINA SOURCING pledge, ensuring that customers can rely on the caliber of our offerings. Initiate the purchasing process today and see how Integrated Parts Procurement can serve as your strategic sourcing partner. For additional inquiries, call or email us directly; we are on standby 24/7x365!
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 870 INCHES MINIMUM AND 0 920 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 280 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 160 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDWENABLE AND HERMETICALLY SEALED AND BURN IN AND ELECTROSTATIC SENSITIVE |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN16 INPUT |
MEMORY | CRHL | BIT QUANTITY4096 |
MEMORY | CSWJ | WORD QUANTITY1024 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT |
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